| PART |
Description |
Maker |
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel TrenchMOS?? standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK2906-01 |
N-channel MOS-FET
N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| 2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| 2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
